NMOS

Simple MOS Transistor

Library

Electrical/Analog/Semiconductors

Description

The NMOS model is a simple model of a n-channel metal-oxide semiconductor FET. It differs slightly from the device used in the SPICE simulator.

The model does not consider capacitances. A high drain-source resistance RDS is included to avoid numerical difficulties.

Some typical parameter sets are:

W       L      Beta        Vt       K2       K5       DW         DL

[m]     [m]    [A/V^2]     [V]      [-]      [-]      [m]        [m]

12.e-6  4.e-6  .062e-3   -4.5      .24     .61     -1.2e-6     -.9e-6    depletion

60.e-6  3.e-6  .048e-3     .1      .08     .68     -1.2e-6     -.9e-6    enhancement

12.e-6  4.e-6  .0625e-3   -.8      .21     .78     -1.2e-6     -.9e-6    zero

50.e-6  8.e-6  .0299e-3    .24    1.144    .7311   -5.4e-6    -4.e-6

20.e-6  6.e-6  .041e-3     .8     1.144    .7311   -2.5e-6    -1.5e-6

30.e-6  9.e-6  .025e-3   -4.       .861    .878    -3.4e-6    -1.74e-6

30.e-6  5.e-6  .031e-3     .6     1.5      .72      0         -3.9e-6

50.e-6  6.e-6  .0414e-3  -3.8      .34     .8      -1.6e-6    -2.e-6     depletion

50.e-6  5.e-6  .03e-3      .37     .23     .86     -1.6e-6    -2.e-6     enhancement

50.e-6  6.e-6  .038e-3    -.9      .23     .707    -1.6e-6    -2.e-6     zero

20.e-6  4.e-6  .06776e-3   .5409   .065    .71      -.8e-6     -.2e-6

20.e-6  4.e-6  .06505e-3   .6209   .065    .71      -.8e-6     -.2e-6

20.e-6  4.e-6  .05365e-3   .6909   .03     .8       -.3e-6     -.2e-6

20.e-6  4.e-6  .05365e-3   .4909   .03     .8       -.3e-6     -.2e-6

12.e-6  4.e-6  .023e-3   -4.5      .29     .6       0          0         depletion

60.e-6  3.e-6  .022e-3     .1      .11     .65      0          0         enhancement

12.e-6  4.e-6  .038e-3    -.8      .33     .6       0          0         zero

20.e-6  6.e-6  .022e-3     .8     1        .66      0          0

References: Spiro,H.: Simulation integrierter Schaltungen. R. Oldenbourg Verlag Muenchen Wien 1990.

Parameters

    NMOS_0

  • W [m] : Width (W): Scalar.
  • L [m] : Length (L): Scalar.
  • Beta [A/(V*V)] : Transconductance parameter (Beta): Scalar.
  • Vt [V] : Zero bias threshold voltage (Vt): Scalar.
  • K2 [-] : Bulk threshold parameter (K2): Scalar.
  • K5 [-] : Reduction of pinch-off region (K5): Scalar.
  • dW [m] : narrowing of channel (dW): Scalar.
  • dL [m] : shortening of channel (dL): Scalar.
  • RDS [Ohm] : Drain-Source-Resistance (RDS): Scalar.

Ports

  • Port 1 at left position: implicit input fixedport numbered 1.
  • Port 1 at right position: implicit output fixedport numbered 1.
  • Port 2 at right position: implicit output fixedport numbered 2.
  • Port 3 at right position: implicit output fixedport numbered 3.

See Also