Simple MOS Transistor
Electrical/Analog/Semiconductors
The PMOS model is a simple model of a p-channel metal-oxide semiconductor FET. It differs slightly from the device used in the SPICE simulator.
The model does not consider capacitances. A high drain-source resistance RDS is included to avoid numerical difficulties.
Some typical parameter sets are:
W L Beta Vt K2 K5 DW DL
[m] [m] [A/V^2] [V] [-] [-] [m] [m]
50.e-6 8.e-6 .0085e-3 -.15 .41 .839 -3.8e-6 -4.0e-6
20.e-6 6.e-6 .0105e-3 -1.0 .41 .839 -2.5e-6 -2.1e-6
30.e-6 5.e-6 .0059e-3 -.3 .98 1.01 0 -3.9e-6
30.e-6 5.e-6 .0152e-3 -.69 .104 1.1 -.8e-6 -.4e-6
30.e-6 5.e-6 .0163e-3 -.69 .104 1.1 -.8e-6 -.4e-6
30.e-6 5.e-6 .0182e-3 -.69 .086 1.06 -.1e-6 -.6e-6
20.e-6 6.e-6 .0074e-3 -1. .4 .59 0 0
References: Spiro,H.: Simulation integrierter Schaltungen. R. Oldenbourg Verlag Muenchen Wien 1990.